2SK3398(2002) 데이터 시트보기 (PDF) - Toshiba
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2SK3398 Datasheet PDF : 6 Pages
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2SK3398
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
V (BR) GSS
VGS = ±25 V, VDS = 0 V
IG = ±10 mA, VDS = 0 V
¾
¾
±10
mA
±30
¾
¾
V
IDSS
V (BR) DSS
Vth
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
¾
¾
100
mA
500
¾
¾
V
2.0
¾
4.0
V
RDS (ON) VGS = 10 V, ID = 6 A
¾
0.4 0.52
W
ïYfsï
Ciss
Crss
VDS = 10 V, ID = 6 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
4.0
9.0
¾
S
¾ 2040 ¾
¾
200
¾
pF
Coss
¾
630
¾
tr
VG1S0 V
0V
ton
tf
ID = 6 A VOUT
¾
22
¾
¾
58
¾
RL = 33 W
ns
¾
36
¾
toff
Duty <= 1%, tw = 10 ms VDD ~- 200 V
¾
180
¾
Qg
Qgs
VDD ~- 400 V, VGS = 10 V, ID = 10 A
Qgd
¾
45
¾
¾
25
¾
nC
¾
20
¾
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
¾
¾
IDR = 12 A, VGS = 0 V
IDR = 12 A, VGS = 0 V,
dIDR/dt = 100 A/ms
Min Typ. Max Unit
¾
¾
12
A
¾
¾
48
A
¾
¾
-1.7
V
¾ 1200 ¾
ms
¾
16
¾
mC
Marking
K3398
※
Type
※ Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
2
2002-09-04
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