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2SK3398(2002) 데이터 시트보기 (PDF) - Toshiba
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제조사
2SK3398
(Rev.:2002)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Toshiba
2SK3398 Datasheet PDF : 6 Pages
1
2
3
4
5
6
12
Common
source
10
Tc
=
25°C
pulse test
8
I
D
– V
DS
10
6
5.2
15
6
5
4.75
4
4.5
2
4 25
VGS
=
4 V
0
0
2
4
6
8
10
Drain-source voltage V
DS
(V)
24
Common source
VDS
=
20 V
20
pulse test
16
I
D
– V
GS
12
8
100
4
25
Tc
= -
55°C
0
0
2
4
6
8
10
12
Gate-source voltage V
GS
(V)
2SK3398
24
10
20
15
16
12
I
D
– V
DS
6.0
55
5.75
Common source
Tc
=
25°C
pulse test
5.2
50
8
4.75
45
4
VGS
=
4 0 V
0
0
10
20
30
40
50
60
Drain-source voltage V
DS
(V)
V
DS
– V
GS
12
Common source
Tc
=
25°C
10
pulse test
8
6
ID
=
12 A
4
6
2
3
0
0
4
8
12
16
20
24
Gate-source voltage V
GS
(V)
30
Common source
VDS
=
20 V
10
Pulse test
5
3
ï
Y
fs
ï -
I
D
Tc
= -
55°C
100
25
1
05
03
0.1
0.3 0.5 1
3 5 10
30
Drain current I
D
(A)
10
Common source
5
Tc
=
25°C
Pulse test
3
R
DS (ON)
-
I
D
1
05
VGS
=
10, 15 V
03
0.1
0.1
0.3 0 5 1
3 5 10
30
Drain current I
D
(A)
3
2002-09-04
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