2SK3211 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SK3211 Datasheet PDF : 10 Pages
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2SK3211
1000
500
Body–Drain Diode Reverse
Recovery Time
di / dt = 50 A / µs
VGS = 0, Ta = 25 °C
200
100
50
20
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I DR (A)
10000
5000
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
200
100
Crss
50
20 VGS = 0
f = 1 MHz
10
0
10
20 30 40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
200
20
I D = 20 A
160
VDD = 150 V
16
100 V
50 V
120
12
VGS
80
8
40
VDD = 150 V
4
100 V
50 V VDS 0
0
40 80 120 160 200
Gate Charge Qg (nc)
1000
500
200
Switching Characteristics
t d(off)
tf
100
tr
50
VGS = 10 V, V DD = 30 V
t d(on) PW = 5 µs, duty < 1 %
20
10
0.1 0.2 0.5 1 2
5 10 20
Drain Current I D (A)
6
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