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2SK3566 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SK3566
Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
Hitachi -> Renesas Electronics
2SK3566 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SK3566
r
th
– t
w
10
1
Duty=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
10
μ
100
μ
PDM
SINGLE PULSE
t
T
DuDtyut
=
y t
=
/Tt/T
RtRh t(hch(c-ch)-c
=
) 3
=
.112.255°C°C/W/W
1
m
10
m
100
m
1
10
PULSE WIDTH t
w
(s)
SAFE OPERATING AREA
100
10
ID max (PULSED)
*
ID max (CONTINUOUS)
*
1
DC OPERATION
Tc
=
25°C
1 ms
*
100
µ
s
*
0.1
※
SINGLE NONREPETITIVE PULSE Tc=25
℃
CURVES MUST BE DERATED LINEARLY WITH
INCREASE IN TEMPERATURE
.
0.01
1
10
100
VDSS max
1000
10000
DRAIN-SOURCE VOLTAGE V
DS
(V)
E
AS
– T
ch
250
200
150
100
50
0
25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
T
ch
(°C)
15 V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
TEST CIRCUIT
WAVE FORM
R
G
=
25
Ω
V
DD
=
90 V, L
=
43.4mH
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
B
BVDSS
VDSS
−
VDD
⎟⎟⎠⎞
5
2005-01-24
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