AS4LC1M16883C-8EC 데이터 시트보기 (PDF) - Austin Semiconductor

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AS4LC1M16883C-8EC

1 MEG x 16 DRAM

Austin Semiconductor 

AUSTIN SEMICONDUCTOR, INC.

ELECTRICAL TEST REQUIREMENTS

AS4LC1M16 883C

1 MEG x 16 DRAM

PRELIMINARY

MIL-STD-883 TEST REQUIREMENTS

INTERIM ELECTRICAL (PRE-BURN-IN) TEST PARAMETERS

(Method 5004)

FINAL ELECTRICAL TEST PARAMETERS

(Method 5004)

GROUP A TEST REQUIREMENTS

(Method 5005)

GROUP C AND D END-POINT ELECTRICAL PARAMETERS

(Method 5005)

SUBGROUPS

(per Method 5005, Table I)

2, 8A, 10

1*, 2, 3, 7*, 8, 9, 10, 11

1, 2, 3, 4**, 7, 8, 9, 10, 11

1, 2, 3, 7, 8, 9, 10, 11

* PDA applies to subgroups 1 and 7.

** Subgroup 4 shall be measured only for initial qualification and after process or design changes, which may affect input

or output capacitance.

AS4LC1M16

REV. 3/97

DS000020

2-113

Austin Semiconductor, Inc., reserves the right to change products or specifications without notice.

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