NXP Semiconductors
74AHC1G66; 74AHCT1G66
Single-pole single-throw analog switch
Table 12. Additional dynamic characteristics for 74AHC1G66 and 74AHCT1G66 …continued
GND = 0 V; tr = tf = 3.0 ns; CL = 50 pF; unless otherwise specified. All typical values are measured at Tamb = 25 °C.
Symbol Parameter
Conditions
Min
Typ
Max Unit
f(−3dB)
−3 dB frequency
response
RL = 50 Ω; CL = 10 pF;
see Figure 12 and 13
VCC = 3.0 V to 3.6 V
-
VCC = 4.5 V to 5.5 V
-
αiso
isolation (OFF-state) RL = 600 Ω; fi = 1 MHz; see Figure 14 [1]
VCC = 3.0 V to 3.6 V; VI = 2.5 V
-
VCC = 4.5 V to 5.5 V; VI = 4.0 V
-
230
-
MHz
280
-
MHz
−50
-
dB
−50
-
dB
[1] Adjust input voltage VI to 0 dBm level (0 dBm =1 mW into 50 Ω).
11.3 Test circuits and graphs
VCC
VCC
VIH
E
10 µF Y/Z
2RL
Z/Y
fi
2RL
VO
CL D
Test conditions:
VCC = 3.0 V to 3.6 V; VI = 2.5 V (p-p).
VCC = 4.5 V to 5.5 V; VI = 4.0 V (p-p).
Fig 11. Test circuit for measuring total harmonic distortion
001aai678
VIH
E
0.1 µF Y/Z
VCC
VCC
2RL
Z/Y
fi
2RL
VO
CL dB
001aai680
With fi = 1 MHz adjust the switch input voltage for a 0 dBm level at the switch output, (0 dBm = 1 mW into 50 Ω). Then increase
the input fi frequency until the dB meter reads −3 dB.
Fig 12. Test circuit for measuring the −3 dB frequency response
74AHC_AHCT1G66_4
Product data sheet
Rev. 04 — 18 December 2008
© NXP B.V. 2008. All rights reserved.
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