ACT5830QJ1CF-T 데이터 시트보기 (PDF) - Active-Semi, Inc
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ACT5830QJ1CF-T Datasheet PDF : 41 Pages
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®
ACT5830
Rev 2, 20-Jan-11
LDO5
ELECTRICAL CHARACTERISTICS
(VIN1 = 3.6V, COUT5 = 1µF, TA = 25°C unless otherwise specified.)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
Input Supply Range
3.1
5.5
V
Input Under Voltage Lockout
UVLO Hysteresis
Output Voltage Accuracy
Line Regulation Error
Load Regulation Error
Power Supply Rejection Ratio
Supply Current per Output
Dropout Voltage2
Output Current
VIN1 Input Rising
2.9
VIN1 Input Falling
TA = 25°C
-1.2
TA = -40°C to 85°C
-2.5
VIN5 = Max (VNOM1 + 0.5V, 3.1V) to 5.5V
IOUT5 = 1mA to 150mA
f = 1kHz, IOUT5 = 150mA, COUT5 = 1µF
f = 10kHz, IOUT5 = 150mA, COUT5 = 1µF
LDO5 Enabled
LDO5 Disabled
IOUT5 = 80mA
3
0.1
0
0
0
-0.004
70
60
40
0
100
3.1
V
V
2
%
3
mV/V
%/mA
dB
µA
200 mV
150 mA
Current Limit
VOUT5 = 95% of Regulation Voltage
165
260
mA
Current Limit Short Circuit Foldback VOUT5 = 0V
0.45 x ILIM
Internal Soft-Start
100
µs
Power Good Flag High Threshold
Output Noise
Stable COUT5
VOUT5, Hysteresis = -1%
COUT5 = 10µF, f = 10Hz to 100kHz
89
%
40
µVRMS
1
20
µF
c: VNOM refers to the nominal output voltage level for LDO5 as defined by the Ordering Information section.
2: Dropout Voltage is defined as the different voltage between input and output when the output voltage drops 100mV below the regu-
lation voltage at 1V differential voltage.
Innovative PowerTM
ActivePMUTM is a trademark of Active-Semi.
I2CTM is a trademark of NXP.
- 29 -
www.active-semi.com
Copyright © 2010 Active-Semi, Inc.
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