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AD8610BR-REEL7(RevD) 데이터 시트보기 (PDF) - Analog Devices

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AD8610BR-REEL7 Datasheet PDF : 20 Pages
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VS = ؎13V
VIN p-p = 20V
AV = ؊1
RL = 2k
SR = 55V/s
CL = 20pF
TIME – 400ns/DIV
TPC 37. +SR at G = –1
AD8610/AD8620
VS = ؎13V
VIN p-p = 20V
AV = ؊1
RL = 2k
SR = 50V/s
CL = 20pF
TIME – 400ns/DIV
TPC 38. –SR at G = –1
CS(dB) = 20 log (VOUT / 10 ؋ VIN)
R1
VIN +
20V p-p
0
+13V
3
U1
20k
R2
V+
2 V–
V– 6 2k
5 V+ 7
R4 2k2k
0
U2
–13V
0
0
0
Figure 1. Channel Separation Test Circuit
FUNCTIONAL DESCRIPTION
The AD8610/AD8620 is manufactured on Analog Devices, Inc.’s
proprietary XFCB (eXtra Fast Complementary Bipolar) process.
XFCB is fully dielectrically isolated (DI) and used in conjunc-
tion with N-channel JFET technology and trimmable thin-film
resistors to create the world’s most precise JFET input amplifier.
Dielectrically isolated NPN and PNP transistors fabricated on
XFCB have FT greater than 3 GHz. Low TC thin film resistors
enable very accurate offset voltage and offset voltage tempco
trimming. These process breakthroughs allowed Analog Devices’
world class IC designers to create an amplifier with faster slew
rate and more than 50% higher bandwidth at half of the current
consumed by its closest competition. The AD8610 is uncondi-
tionally stable in all gains, even with capacitive loads well in
excess of 1 nF. The AD8610B achieves less than 100 µV of offset
and 1 µV/°C of offset drift, numbers usually associated with very
high precision bipolar input amplifiers. The AD8610 is offered in
the tiny 8-lead MSOP as well as narrow 8-lead SOIC surface-
mount packages and is fully specified with supply voltages from
± 5 V to ± 13 V. The very wide specified temperature range, up to
125°C, guarantees superior operation in systems with little or no
active cooling.
The unique input architecture of the AD8610 features extremely
low input bias currents and very low input offset voltage. Low
power consumption minimizes the die temperature and maintains
the very low input bias current. Unlike many competitive JFET
amplifiers, the AD8610/AD8620 input bias currents are low even
at elevated temperatures. Typical bias currents are less than 200 pA
at 85°C. The gate current of a JFET doubles every 10°C resulting
in a similar increase in input bias current over temperature.
Special care should be given to the PC board layout to minimize
leakage currents between PCB traces. Improper layout and
board handling generates leakage current that exceeds the bias
current of the AD8610/AD8620.
138
136
134
132
130
128
126
124
122
120
0
50
100
150
200
250 300
350
FREQUENCY – kHz
Figure 2. AD8620 Channel Separation Graph
Power Consumption
A major advantage of the AD8610/AD8620 in new designs is
the saving of power. Lower power consumption of the AD8610
makes it much more attractive for portable instrumentation and
for high-density systems, simplifying thermal management, and
reducing power supply performance requirements. Compare the
power consumption of the AD8610/AD8620 versus the OPA627
in Figure 3.
8
7
OPA627
6
5
4
3
AD8610
2
–75 –50 –25
0
25
50
75
TEMPERATURE – ؇C
100 125
Figure 3. Supply Current vs. Temperature
REV. D
–9–

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