ADP3418KRZ 데이터 시트보기 (PDF) - ON Semiconductor

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ADP3418KRZ

Dual Bootstrapped, 12 V MOSFET Driver with Output Disable

ON Semiconductor 

SPECIFICATIONS1

VCC = 12 V, BST = 4 V to 26 V, TA = 0°C to 85°C, unless otherwise noted.

Table 1.

Parameter

SUPPLY

Supply Voltage Range

Supply Current

OD INPUT

Input Voltage High

Input Voltage Low

Input Current

Propagation Delay Time

PWM INPUT

Input Voltage High

Input Voltage Low

Input Current

HIGH-SIDE DRIVER

Output Resistance, Sourcing Current

Output Resistance, Sinking Current

Transition Times

Propagation Delay2

LOW-SIDE DRIVER

Output Resistance, Sourcing Current

Output Resistance, Sinking Current

Transition Times

Propagation Delay2

Timeout Delay

Symbol Conditions

VCC

ISYS

BST = 12 V, IN = 0 V

tpdhOD

tpdlOD

See Figure 3

See Figure 3

trDRVH

tfDRVH

tpdhDRVH

tpdlDRVH

VBST − VSW = 12 V

VBST − VSW = 12 V

See Figure 4, VBST − VSW = 12 V, CLOAD = 3 nF

See Figure 4, VBST − VSW = 12 V, CLOAD = 3 nF

See Figure 4, VBST − VSW = 12 V

VBST − VSW = 12 V

trDRVL

tfDRVL

tpdhDRVL

tpdlDRVL

See Figure 4, CLOAD = 3 nF

See Figure 4, CLOAD = 3 nF

See Figure 4

See Figure 4

SW = 5 V

SW = PGND

1 All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC).

2 For propagation delays, tpdh refers to the specified signal going high, and tpdl refers to it going low.

ADP3418

Min Typ Max Unit

4.15

3

13.2 V

6

mA

2.6

V

0.8 V

−1

+1 µA

25 40 ns

20 40 ns

3.0

V

0.8 V

−1

+1 µA

1.8 3.0 Ω

1.0 2.5 Ω

35 45 ns

20 30 ns

10 40 65 ns

20 35 ns

1.8 3.0 Ω

1.0 2.5 Ω

25 35 ns

21 30 ns

5

30 60 ns

10 20 ns

240

ns

90 120

ns

Rev. 6 | Page 3 of 13 | www.onsemi.com

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