AO4448 데이터 시트보기 (PDF) - Alpha and Omega Semiconductor
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AO4448 Datasheet PDF : 6 Pages
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AO4448
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
1000
140
130 di/dt=800A/µs
120 Irm
125ºC
110
25ºC
100
90
80
Qrr
70
12
10
8
6
125ºC
4
25ºC
2
60
0
0
5
10 15 20 25 30
IS (A)
Figure 13: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
100
14
Is=20A
80
125ºC
60
Qrr
40
125ºC
12
25ºC
10
8
6
20
Irm
0
25ºC
4
2
0
200
400
600
800 1000
di/dt (A/µs)
Figure 15: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
25
3
di/dt=800A/µs
20
125ºC
2.5
15
trr
2
25ºC
1.5
10
1
25ºC
5S
0.5
125ºC
0
0
0
5
10
15
20
25
30
IS (A)
Figure 14: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
35
2.5
30
25 40
125ºC
Is=20A
2
20
25ºC
1.5
trr
15
1
10
25ºC
S
0.5
5
125ºC
0
0
0
200
400
600
800 1000
di/dt (A/µs)
Figure 16: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Rev 1: Nov. 2010
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