AO4800 데이터 시트보기 (PDF) - Alpha and Omega Semiconductor
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AO4800 Datasheet PDF : 6 Pages
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AO4800
30V Dual N-Channel MOSFET
General Description
Product Summary
The AO4800 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. The two MOSFETs
make a compact and efficient switch and synchronous
rectifier combination for use in buck converters.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
RDS(ON) (at VGS = 2.5V)
100% UIS Tested
100% Rg Tested
30V
6.9A
< 27mΩ
< 32mΩ
< 50mΩ
Top View
SOIC-8
Bottom View
Top View
S2 1
G2 2
S1 3
G1 4
8 D2
7 D2
6 D1
5 D1 G1
D1
G2
S1
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM
IAS, IAR
EAS, EAR
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±12
6.9
5.8
40
14
10
2
1.3
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
48
74
Maximum Junction-to-Lead
Steady-State
RθJL
32
Max
62.5
90
40
D1
S2
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 6: Dec 2011
www.aosmd.com
Page 1 of 6
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