AO7404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
VDS=10V
4
ID=1A
3
2
1
200
150
100
Coss
50
Ciss
Crss
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
0
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
10µs
1.0
1s
0.1s 10ms 1ms
100µs
10s DC
0.1
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
16
TJ(Max)=150°C
TA=25°C
12
8
4
0
0.001 0.01 0.1
1
10
100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=360°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
Ton
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
1000
Alpha & Omega Semiconductor, Ltd.