AS4C256K16F0-25JC 데이터 시트보기 (PDF) - Alliance Semiconductor
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AS4C256K16F0-25JC Datasheet PDF : 25 Pages
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AS4C256K16FO
®
AC parameters common to all waveforms
(VCC = 5V ± 10%, GND = 0V, Ta = 0° C to +70° C)
Standard
–25
–30
–35
–50
Symbol
Parameter
Min Max Min Max Min Max Min Max Unit Notes
tRC Random read or write cycle time 45 – 65 – 70 – 85 – ns
tRP RAS precharge time
15 – 25 – 25 – 25 – ns
tRAS RAS pulse width
25 75K 30 75K 35 75K 50 75K ns
tCAS CAS pulse width
4 – 5 – 6 – 10 – ns
tRCD RAS to CAS delay time
10 17 15 20 16 24 15 35 ns 6
tRAD RAS to column address delay time 8 13 10 14 11 17 15 25 ns
7
tRSH(R) CAS to RAS hold time (read cycle) 7
– 10 – 10 – 10 –
ns
tCSH RAS to CAS hold time
20 – 30 – 35 – 50 – ns
tCRP CAS to RAS precharge time
5 – 5 – 5 – 5 – ns
tASR Row address setup time
0 – 0 – 0 – 0 – ns
tRAH Row address hold time
5 – 5 – 6 – 9 – ns
tT Transition time (rise and fall)
1.5 50 1.5 50 1.5 50 3 50 ns 4,5
tREF Refresh period
– 8 – 8 – 8 – 8 ms 3
tCLZ CAS to output in low Z
0 – 0 – 0 – 3 – ns 8
Read cycle
Standard
Symbol
Parameter
tRAC
tCAC
tAA
tAR(R)
tRCS
tRCH
tRRH
tRAL
tCPN
tOFF
Access time from RAS
Access time from CAS
Access time from address
Column add hold from RAS
Read command setup time
Read command hold time to CAS
Read command hold time to RAS
Column address to RAS Lead time
CAS precharge time
Output buffer turn-off time
(VCC = 5V±10%, GND = 0V, Ta = 0° C to + 70° C)
–25
–30
–35
–50
Min Max Min Max Min Max Min Max Unit Notes
– 25 – 30 – 35 – 50 ns 6
– 7 – 10 – 10 – 10 ns 6,13
– 12 – 16 – 18 – 25 ns 7,13
19 – 26 – 28 – 30 – ns
0– 0
–
0
–
0
– ns
0– 0
–
0
–
0
–
ns
9
0– 0
–
0
–
0
–
ns
9
12 – 16 – 18 – 25 – ns
4– 3
–
4
–
5
–
ns
06 0
8
0
8
0
8 ns 8,10
4/11/01; V.0.9.1
Alliance Semiconductor
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