AT-42036 데이터 시트보기 (PDF) - HP => Agilent Technologies
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AT-42036 Datasheet PDF : 7 Pages
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Agilent AT-42036
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Data Sheet
Description
Agilent’s AT-42036 is a general
purpose NPN bipolar transistor
that offers excellent high
frequency performance. The
AT-42036 is housed in a cost
effective surface mount 100 mil
micro-X package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 20 emitter
finger interdigitated geometry
yields a medium sized transistor
with impedances that are easy to
match for low noise and medium
power applications. This device is
designed for use in low noise,
wideband amplifier, mixer and
oscillator applications in the VHF,
UHF, and microwave frequencies.
An optimum noise match near
50 Ω up to 1 GHz, makes this
device easy to use as a low noise
amplifier.
The AT-42036 bipolar transistor is
fabricated using Agilent’s 10 GHz
fT Self-Aligned-Transistor (SAT)
process. The die is nitride passi-
vated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
Features
• High output power:
21.0 dBm typical P1 dB at 2.0 GHz
20.5 dBm typical P1 dB at 4.0 GHz
• High gain at 1 dB compression:
14.0 dB typical G1 dB at 2.0 GHz
9.5 dB typical G1 dB at 4.0 GHz
• Low noise figure:
1.9 dB typical NFO at 2.0 GHz
• High gain-bandwidth product:
8.0 GHz typical fT
• Cost effective ceramic microstrip
package
36 micro-X Package
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