AT49BV160 데이터 시트보기 (PDF) - Atmel Corporation

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AT49BV160

16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory

Atmel Corporation 

Figure 1. Data Polling Algorithm

(Configuration Register = 00)

START

Figure 2. Data Polling Algorithm

(Configuration Register = 01)

START

Read I/O7 - I/O0

Addr = VA

YES

I/O7 = Data?

NO

NO

I/O3, I/O5 = 1?

YES

Read I/O7 - I/O0

Addr = VA

I/O7 = Data?

YES

NO

Program/Erase

Operation Not

Successful, Write

Product ID

Exit Command

Program/Erase

Operation

Successful,

Device in

Read Mode

Notes:

1. VA = Valid address for programming. During a sec-

tor erase operation, a valid address is any sector

address within the sector being erased. During

chip erase, a valid address is any non-protected

sector address.

2. I/O7 should be rechecked even if I/O5 = “1”

because I/O7 may change simultaneously with

I/O5.

10 AT49BV/LV160(T)/161(T)

Read I/O7 - I/O0

Addr = VA

NO

I/O7 = 1?

YES

NO

I/O3, I/O5 = 1?

YES

Program/Erase

Operation Not

Successful, Write

Product ID

Exit Command

Program/Erase

Operation

Successful,

Write Product ID

Exit Command

Note:

1. VA = Valid address for programming. During a sec-

tor erase operation, a valid address is any sector

address within the sector being erased. During

chip erase, a valid address is any non-protected

sector address.

1427L–FLASH–02/03

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