BB404M 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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BB404M

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Hitachi -> Renesas Electronics 

Main Characteristics

Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG)

VG1

RG

Gate 1

VG2

Gate 2

BB404M

Source

Drain

A

ID

Power Gain, Noise Figure Test Circuit

VT

1000p

VG2

1000p

VT

1000p

Input (50Ω)

1000p

1000p 47k

47k

BBFET

L1

36p

1000p

1SV70

R G 180k (VD=5V)

470k (VD=9V)

47k

L2

1000p

Output (50Ω)

10p max

RFC

1SV70

1000p

V D = V G1

Unit Resistance (Ω)

Capacitance (F)

L1 :φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns

L2 :φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns

RFC :φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns

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