BC636 데이터 시트보기 (PDF) - ON Semiconductor

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BC636

High Current Transistors PNP Silicon

ON Semiconductor 

BC636, BC636–16, BC638, BC640, BC640–16

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = –10 mAdc, IB = 0)

BC636

BC638

BC640

V(BR)CEO

–45

–60

–80

Collector–Base Breakdown Voltage

(IC = –100 µAdc, IE = 0)

BC636

BC638

BC640

V(BR)CBO

–45

–60

–80

Emitter–Base Breakdown Voltage

(IE = –10 mAdc, IC = 0)

V(BR)EBO

–5.0

Collector Cutoff Current

(VCB = –30 Vdc, IE = 0)

(VCB = –30 Vdc, IE = 0, TA = 125°C)

ON CHARACTERISTICS (1)

ICBO

—

—

DC Current Gain

(IC = –5.0 mAdc, VCE = –2.0 Vdc)

(IC = –150 mAdc, VCE = –2.0 Vdc)

(IC = –500 mA, VCE = –2.0 V)

BC636

BC636–16

BC638

BC640

BC640–16

hFE

25

40

100

40

40

100

25

Collector–Emitter Saturation Voltage

(IC = –500 mAdc, IB = –50 mAdc)

VCE(sat)

—

—

Base–Emitter On Voltage

(IC = –500 mAdc, VCE = –2.0 Vdc)

VBE(on)

—

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = –50 mAdc, VCE = –2.0 Vdc, f = 100 MHz)

fT

—

Output Capacitance

(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)

Cob

—

Input Capacitance

(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)

Cib

—

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%.

Typ

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

–0.25

–0.5

—

150

9.0

110

Max

—

—

—

—

—

—

—

–100

–10

—

250

250

160

160

250

—

–0.5

—

–1.0

—

—

—

Unit

Vdc

Vdc

Vdc

nAdc

µAdc

—

Vdc

Vdc

MHz

pF

pF

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