BD900A 데이터 시트보기 (PDF) - SavantIC Semiconductor

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BD900A

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

BD896A/898A/900A

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO

Collector-emitter

breakdown voltage

BD896A

BD898A IC=-100mA, IB=0

BD900A

VCEsat Collector-emitter saturation voltage IC=-4A ,IB=-16mA

VBE

Base-emitter on voltage

IC=-4A ; VCE=-3V

ICBO

Collector

cut-off current

BD896A

BD898A

BD900A

VCB=-45V, IE=0

TC=100

VCB=-60V, IE=0

TC=100

VCB=-80V, IE=0

TC=100

BD896A VCE=-30V, IB=0

ICEO

Collector

cut-off current

BD898A VCE=-30V, IB=0

BD900A VCE=-40V, IB=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

VEC

Diode forward voltage

ton

Turn-on time

toff

Turn-off time

IC=-4A ; VCE=-3V

IE=-8A

IC=3A ; IB1=-IB2=12mA

VBE=-3.5V;RL=10B;tp=20µs

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c

Thermal resistance junction to case

MIN TYP. MAX UNIT

-45

-60

V

-80

-2.8

V

-2.5

V

-0.2

-2.0

-0.2

-2.0

mA

-0.2

-2.0

-0.5

mA

-2

mA

750

-3.5

V

1

µs

5

µs

MAX

1.79

UNIT

/W

2

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