BD900A 데이터 시트보기 (PDF) - Inchange Semiconductor
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BD900A Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BD896A/898A/900A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BD896A
-45
V(BR)CEO
Collector-emitter
breakdown voltage
BD898A IC=-100mA, IB=0
-60
V
BD900A
-80
VCEsat Collector-emitter saturation voltage IC=-4A ,IB=-16mA
-2.8
V
VBE
Base-emitter on voltage
IC=-4A ; VCE=-3V
-2.5
V
ICBO
Collector
cut-off current
BD896A
BD898A
BD900A
VCB=-45V, IE=0
TC=100℃
VCB=-60V, IE=0
TC=100℃
VCB=-80V, IE=0
TC=100℃
-0.2
-2.0
-0.2
-2.0
mA
-0.2
-2.0
BD896A VCE=-30V, IB=0
固I电NC半H导A体NGE SEMICONDUCTOR ICEO
Collector
cut-off current
BD898A VCE=-30V, IB=0
BD900A VCE=-40V, IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-4A ; VCE=-3V
VEC
Diode forward voltage
IE=-8A
-0.5 mA
-2
mA
750
-3.5
V
ton
Turn-on time
IC=3A ; IB1=-IB2=12mA
1
μs
toff
Turn-off time
VBE=-3.5V;RL=10Ω;tp=20μs
5
μs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
MAX
1.79
UNIT
℃/W
2
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