BDT64C 데이터 시트보기 (PDF) - Inchange Semiconductor
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BDT64C Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDT64/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT64
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDT64A
BDT64B
IC= -30mA ;IB=B 0
BDT64C
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB=B -20mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -100mA
VBE(on)
VECF-1
Base-Emitter On Voltage
C-E Diode Forward Voltage
IC= -5A ; VCE= -4V
IF= -5A
VECF-2
ICEO
ICBO
IEBO
C-E Diode Forward Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
IF= -12A
VCE= 1/2VCEOmax; IB= 0
VCB= VCBOmax;IE= 0
VCB= 1/2VCBOmax;IE= 0;TC= 150℃
VEB= -5V; IC=0
hFE-1
DC Current Gain
IC= -1A ; VCE= -4V
hFE-2
DC Current Gain
IC= -5A ; VCE= -4V
hFE-3
DC Current Gain
IC= -12A ; VCE= -4V
COB
Output Capacitance
Switching times
IE= 0 ; VCB= -10V; ftest=1MHz
ton
Turn-On Time
toff
Turn-Off Time
IC= -5A; IB1= -IB2= -20mA;
VCC= -30V
MIN TYP. MAX UNIT
-60
-80
V
-100
-120
-2.0 V
-3.0 V
-2.5 V
-2.0 V
-2.0
V
-0.2 mA
-0.4
-2.0
mA
-5 mA
1500
1000
750
200
pF
0.5
2
μs
2.5
5
μs
isc Website：www.iscsemi.cn
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