BDX88C 데이터 시트보기 (PDF) - SavantIC Semiconductor

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BDX88C

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ; IB=0

VCEsat-1 Collector-emitter saturation voltage IC=-6A ;IB=-24mA

VCEsat-2 Collector-emitter saturation voltage IC=-12A ;IB=-120mA

VBEsat

Base-emitter saturation voltage

IC=-12A ;IB=-120mA

VBE

Base-emitter on voltage

IC=-6A ; VCE=-3V

hFE-1

DC current gain

IC=-5A ; VCE=-3V

hFE-2

DC current gain

IC=-6A ; VCE=-3V

hFE-3

ICBO

ICEO

IEBO

VF-1

VF-2

DC current gain

Collector cut-off current

Collector cut-off current

Emitter cut-off current

Diode forward voltage

Diode forward voltage

IC=-12A ; VCE=-3V

VCB=-100V; IE=0

TC=150

VCE=-50V; IB=0

VEB=-5V; IC=0

IF=-3A

IF=-8A

Product Specification

BDX88C

MIN TYP. MAX UNIT

-100

V

-2.0

V

-3.0

V

-4.0

V

-2.8

V

1000

750

18000

100

-0.5

-5.0

mA

-1.0

mA

-1.0

mA

-1.8

V

-2.5

V

2

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