BF1211WR 데이터 시트보기 (PDF) - NXP Semiconductors.
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BF1211WR Datasheet PDF : 16 Pages
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NXP Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1211; BF1211R; BF1211WR
handbook, full pagewidth
VAGC
R1
10 kΩ
C1
4.7 nF
RGEN
50 Ω
VI
C2
R2
50 Ω
4.7 nF
RG1
VGG
C3
4.7 nF
DUT
L1
≈ 2.2 μH
C4
RL
50 Ω
4.7 nF
VDS
MGS315
Fig.21 Cross-modulation test set-up.
Table 1 Scattering parameters: VDS = 5 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 C
f
(MHz)
s11
MAGNITUDE
(ratio)
ANGLE
(deg)
s21
MAGNITUDE
(ratio)
ANGLE
(deg)
s12
MAGNITUDE
(ratio)
ANGLE
(deg)
50
0.987
3.86
2.928
175.8
0.0005
89.3
100
0.985
7.73
2.921
171.6
0.0010
86.9
200
0.979
15.25
2.807
163.2
0.0015
91.1
300
0.965
22.84
2.846
155.0
0.0028
77.4
400
0.949
30.15
2.784
146.7
0.0034
74.0
500
0.929
30.25
2.704
138.9
0.0037
71.4
600
0.904
44.24
2.639
130.9
0.0040
69.6
700
0.876
51.16
2.558
123.0
0.0039
69.0
800
0.846
58.16
2.486
115.1
0.0037
70.0
900
0.816
65.15
2.402
107.2
0.0032
74.5
1 000
0.791
72.22
2.315
99.9
0.0028
87.1
s22
MAGNITUDE
(ratio)
0.993
0.993
0.993
0.988
0.985
0.981
0.976
0.971
0.965
0.960
0.956
ANGLE
(deg)
1.58
3.14
6.31
9.41
12.48
15.54
18.59
21.65
24.27
27.79
30.94
Table 2 Noise data: VDS = 5 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 C
f
(MHz)
Fmin
(dB)
opt
(ratio)
400
0.9
0.693
800
1.3
0.707
(deg)
16.75
37.33
Rn
()
29.85
29.90
2003 Dec 16
10
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