BF1216 데이터 시트보기 (PDF) - NXP Semiconductors.
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BF1216 Datasheet PDF : 17 Pages
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NXP Semiconductors
BF1216
Dual N-channel dual gate MOSFET
8.2 Scattering parameters for amplifiers A and B
Table 9. Scattering parameters for amplifiers A and B
VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; Z0 = 50 Ω; typical values.
f (MHz) s11
s21
s12
s22
Magnitude Angle
(ratio)
(degree)
Magnitude Angle
(ratio)
(degree)
Magnitude Angle
(ratio)
(degree)
Magnitude
(ratio)
40
0.9910
−4.73
2.76
175.80
0.00074
99.46
0.9946
100
0.9888
−9.07
2.75
171.94
0.00150
86.12
0.9941
200
0.9853
−18.19
2.73
163.86
0.00292
79.56
0.9929
300
0.9762
−27.09
2.69
155.90
0.00420
74.12
0.9916
400
0.9656
−35.80
2.65
148.17
0.00540
69.71
0.9900
500
0.9502
−44.45
2.59
140.50
0.00634
65.32
0.9882
600
0.9331
−52.89
2.52
132.96
0.00709
61.01
0.9855
700
0.9155
−61.08
2.45
125.69
0.00751
57.66
0.9830
800
0.8966
−69.01
2.38
118.59
0.00782
54.58
0.9810
900
0.8755
−76.72
2.30
111.71
0.00792
52.37
0.9798
1 000
0.8550
−84.10
2.22
105.07
0.00783
50.60
0.9785
Angle
(degree)
−1.29
−2.65
−5.31
−7.92
−10.49
−13.05
−15.66
−18.24
−20.75
−23.19
−25.68
8.3 Noise data for amplifiers A and B
Table 10. Noise data for amplifiers A and B
VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA, Tamb = 25 °C; typical values.
f (MHz)
NFmin (dB)
Γopt
(ratio)
400
1.0
0.788
800
1.5
0.673
(degree)
28.9
58.8
rn (ratio)
0.903
0.725
BF1216_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 29 April 2010
© NXP B.V. 2010. All rights reserved.
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