BF1216 데이터 시트보기 (PDF) - NXP Semiconductors.
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BF1216 Datasheet PDF : 17 Pages
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NXP Semiconductors
BF1216
Dual N-channel dual gate MOSFET
6. Thermal characteristics
Table 6.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
7. Static characteristics
Conditions
Typ
Unit
240
K/W
Table 7. Static characteristics
Tj = 25 °C.
Symbol Parameter
Conditions
Per MOSFET; unless otherwise specified
V(BR)DSS drain-source breakdown voltage VG1-S = VG2-S = 0 V; ID = 10 μA
amplifier A
amplifier B
V(BR)G1-SS gate1-source breakdown voltage VG2-S = VDS = 0 V; IG1-S = 10 mA
V(BR)G2-SS gate2-source breakdown voltage VG1-S = VDS = 0 V; IG2-S = 10 mA
VF(S-G1) forward source-gate1 voltage
VG2-S = VDS = 0 V; IS-G1 = 10 mA
VF(S-G2) forward source-gate2 voltage
VG1-S = VDS = 0 V; IS-G2 = 10 mA
VG1-S(th) gate1-source threshold voltage VDS = 5 V; VG2-S = 4 V; ID = 100 μA
VG2-S(th) gate2-source threshold voltage VDS = 5 V; VG1-S = 5 V; ID = 100 μA
IDS
drain-source current
VG2-S = 4 V
amplifier A; VDS(A) = 5 V; RG1(A) = 39 kΩ
amplifier B; VDS(B) = 5 V; RG1(B) = 39 kΩ
IG1-S
gate1 cut-off current
VG2-S = 0 V; VDS(A) = VDS(B) = 0 V
amplifier A; VG1-S(A) = 5 V
amplifier B; VG1-S(B) = 5 V
IG2-S
gate2 cut-off current
VG2-S = 4 V; VDS(A) = VDS(B) = 0 V;
VG1-S(A) = VG1-S(B) = 0 V
[1] RG1 connects gate1 to VGG = 5 V; see Figure 17.
Min Typ Max Unit
6-
6-
6-
6-
0.5 -
0.5 -
0.3 -
0.4 -
[1]
--
--
-
V
-
V
10 V
10 V
1.5 V
1.5 V
1.0 V
1.0 V
24 mA
24 mA
- - 50 nA
- - 50 nA
- - 20 nA
BF1216_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 29 April 2010
© NXP B.V. 2010. All rights reserved.
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