BSP613P(2004) 데이터 시트보기 (PDF) - Infineon Technologies

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BSP613P
(Rev.:2004)

SIPMOS Small-Signal-Transistor

Infineon Technologies 

Thermal Characteristics

Parameter

Characteristics

Thermal resistance, junction - soldering point

(Pin 4)

Thermal resistance, junction - ambient, leaded

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 1)

BSP613P

Symbol

Values

Unit

min. typ. max.

RthJS

RthJA

RthJA

-

-

19 K/W

-

100

-

-

- 100

-

-

70

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=-250µA

Gate threshold voltage, VGS = VDS

ID=-1mA

Zero gate voltage drain current

VDS=-60V, VGS=0, Tj=25°C

VDS=-60V, VGS=0, Tj=125°C

Gate-source leakage current

VGS=-20V, VDS=0

Drain-source on-state resistance

VGS=-10V, ID=2.9A

V(BR)DSS -60

-

-V

VGS(th)

-2.1

-3

-4

IDSS

IGSS

µA

- -0.1 -1

-

-10 -100

-

-10 -100 nA

RDS(on)

- 0.11 0.13 Ω

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Page 2

2004-06-02

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