BSP613P 데이터 시트보기 (PDF) - Infineon Technologies

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BSP613P

SIPMOS Small-Signal-Transistor

Infineon Technologies 

SIPMOS® Small-Signal-Transistor

Feature

• P-Channel

• Enhancement mode

• Avalanche rated

• dv/dt rated

• Ideal for fast switching buck converter

• Qualified according to AEC Q101

• Halogen­free according to IE C 61249­2­21

BSP613P

Product Summary

VDS

-60 V

RDS(on) 0.13 Ω

ID

-2.9 A

PG-SOT223

Gate

pin1

Drain

pin 2,4

Source

pin 3

Type

BSP613P

Package

PG-SOT223

Tape and reel Packaging

H6327: 1000pcs/r. Non Dry

Marking

B S P 613 P

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Continuous drain current

ID

TA=25°C

TA=70°C

Pulsed drain current

TA=25°C

Avalanche energy, single pulse

ID=2.9 A , VDD=-25V, RGS=25Ω

ID puls

EAS

Avalanche energy, periodic limited by Tjmax

Reverse diode dv/dt

EAR

dv/dt

IS=2.9A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C

Gate source voltage

Power dissipation

TA=25°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

VGS

Ptot

Tj , Tstg

ESD Class

JESD22-A114-HBM

Value

-2.9

-2.3

-11.6

150

0.18

6

±20

1.8

-55... +150

55/150/56

Class 1c

Unit

A

mJ

kV/µs

V

W

°C

Rev.2.8

Page 1

2016-05-30

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