BSS138N 데이터 시트보기 (PDF) - Infineon Technologies

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BSS138N

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

Parameter

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Reverse Diode

Diode continous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time

Reverse recovery charge

Symbol Conditions

BSS138N

min.

Values

typ.

Unit

max.

C iss

-

C oss

V GS=0 V, V DS=25 V,

f =1 MHz

-

Crss

-

t d(on)

-

tr

V DD=30 V, V GS=10 V,

-

t d(off)

I D=0.23 A, R G=6 Ω

-

tf

-

32

41 pF

7.2

9.5

2.8

3.8

2.3

3.5 ns

3.0

4.5

6.7

10

8.2

12.3

Q gs

-

Q gd

V DD=48 V, I D=0.23 A,

-

Qg

V GS=0 to 10 V

-

V plateau

-

0.10 0.14 nC

0.3

0.4

1.0

1.4

3.3

-V

IS

I S,pulse

T A=25 °C

-

-

0.23 A

-

-

0.92

V SD

V GS=0 V, I F=0.23 A,

T j=25 °C

-

0.83

1.2 V

t rr

V R=30 V, I F=0.23 A,

-

Q rr

di F/dt =100 A/µs

-

9.1

14.5 ns

3.3

5 nC

Rev. 2.86

page 3

2012-04-17

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