BSS138N 데이터 시트보기 (PDF) - Infineon Technologies
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BSS138N Datasheet PDF : 9 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=0.23 A; V GS=10 V
8
10 Typ. gate threshold voltage
V GS(th)=f(T j); V DS=VGS; I D=26 µA
parameter: I D
2
BSS138N
6
4
98 %
1.6
98 %
1.2
typ
0.8
typ
2%
2
0.4
0
-60
-20
20
60
100 140
Tj [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
102
Ciss
0
-60
-20
20
60
100 140
Tj [°C]
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
100
150 °C, 98%
150 °C
25 °C
25 °C, 98%
10-1
101
Coss
10-2
Crss
100
0
Rev. 2.86
10
20
VDS [V]
10-3
30
0
0.4 0.8 1.2 1.6
2
2.4
VSD [V]
page 6
2012-04-17
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