BSS169-H6327 데이터 시트보기 (PDF) - Infineon Technologies
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BSS169-H6327 Datasheet PDF : 9 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=0.05 A; V GS=0 V
24
10 Typ. gate threshold voltage
V GS(th)=f(T j); V DS=3 V; I D=50 µA
parameter: I D
-1.1
BSS169
20
16
98 %
12
8
typ
4
-1.5
-1.9
Max
-2.3
-2.7
typ
Min
-3.1
0
-60 -20 20
60 100 140 180
Tj [°C]
-3.5
-60 -20 20
60 100 140 180
Tj [°C]
11 Threshold voltage bands
I D=f(V GS); V DS=3 V; T j=25 °C
12 Typ. capacitances
C =f(V DS); V GS=-10 V; f =1 MHz
10
103
1
102
N ML K J
0.1
101
50 µA
0.01
-3
Rev. 1.8
-2.5
-2
-1.5
VGS [V]
100
-1
0
page 6
Ciss
Coss
Crss
10
20
30
VDS [V]
2015-06-10
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