BTA216B-800E 데이터 시트보기 (PDF) - Philips Electronics
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BTA216B-800E Datasheet PDF : 6 Pages
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Philips Semiconductors
Three quadrant triacs
guaranteed commutation
Product specification
BTA216B series D, E and F
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
Rth j-mb
Rth j-a
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
minimum footprint, FR4 board
junction to ambient
MIN.
-
-
-
TYP.
-
-
55
MAX.
1.2
1.7
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
IGT
Gate trigger current2
CONDITIONS
MIN. TYP.
MAX.
UNIT
BTA216-
...D ...D ...E ...F
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ G-
T2- G-
-
1.3 5
10 25 mA
-
2.6 5
10 25 mA
-
3.4 5
10 25 mA
IL
Latching current
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
mA
- 10.2 15 25 30 mA
- 11.3 25 30 40 mA
- 19.3 25 30 40
IH
Holding current
VD = 12 V; IGT = 0.1 A
-
8
15 25 30 mA
...D, E, F
VT
On-state voltage
IT = 20 A
-
1.2
1.5
V
VGT
Gate trigger voltage
VD = 12 V; IT = 0.1 A
-
0.7
1.5
V
VD = 400 V; IT = 0.1 A;
0.25 0.4
-
V
Tj = 125 ˚C
ID
Off-state leakage current VD = VDRM(max);
-
0.1
0.5
mA
Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
BTA216- ...D
dVD/dt
dIcom/dt
dIcom/dt
Critical rate of rise of
off-state voltage
VDM = 67% VDRM(max);
30
Tj = 110 ˚C; exponential
waveform; gate open
circuit
Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 2.5
commutating current
IT(RMS) = 16 A;
dVcom/dt = 20V/µs; gate
open circuit
Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 12
commutating current
IT(RMS) = 16 A;
dVcom/dt = 0.1V/µs; gate
open circuit
tgt
Gate controlled turn-on ITM = 20 A; VD = VDRM(max); -
time
IG = 0.1 A; dIG/dt = 5 A/µs
MIN.
TYP. MAX. UNIT
...E ...F ...D
60 70 65
- V/µs
4.7 9.5 7.5
- A/ms
40 50 100 -
A/ms
...D, E, F
-
-
2
-
µs
2 Device does not trigger in the T2-, G+ quadrant.
February 2000
2
Rev 1.000
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