BTA201W-600E 데이터 시트보기 (PDF) - NXP Semiconductors.
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BTA201W-600E Datasheet PDF : 13 Pages
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NXP Semiconductors
BTA201W series E
1 A Three-quadrant triacs high commutation
7. Dynamic characteristics
Table 6. Dynamic characteristics
Symbol Parameter
Conditions
BTA201W-600E and BTA201W-800E
dVD/dt
rate of rise of off-state VDM = 0.67VDRM(max); Tj = 125 °C;
voltage
exponential waveform; gate open circuit
dIcom/dt
rate of change of
commutating current
VDM = 400 V; Tj = 125 °C; IT(RMS) = 4 A;
gate open circuit
dVcom/dt = 20 V/µs
dVcom/dt = 10 V/µs
tgt
gate-controlled turn-on ITM = 20 A; VD = VDRM(max); IG = 0.1 A;
time
dIG/dt = 5 A/µs
Min
Typ
Max Unit
600
-
-
V/µs
2.5
-
-
3.5
-
-
-
2
-
A/ms
A/ms
µs
1.6
VGT
VGT(25°C)
1.2
0.8
001aab101
3
IGT
IGT(25°C)
2
(1)
(2)
(3)
1
003aaa959
0.4
−50
0
50
100
150
Tj (°C)
Fig 7. Normalized gate trigger voltage as a function
of junction temperature
0
−50
0
(3)
(2)
(1)
50
100
150
Tj (°C)
(1) T2− G−
(2) T2+ G−
(3) T2+ G+
Fig 8. Normalized gate trigger current as a function
of junction temperature
BTA201W_SER_3
Product data sheet
Rev. 03 — 13 March 2008
© NXP B.V. 2008. All rights reserved.
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