BTA208S-800B 데이터 시트보기 (PDF) - NXP Semiconductors.

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BTA208S-800B

3Q Hi-com Triac

NXP Semiconductors. 

BTA208S-800B

3Q Hi-com Triac

Rev. 03 — 14 April 2011

Product data sheet

1. Product profile

1.1 General description

Planar passivated high commutation three quadrant triac in a SOT428 surface-mountable

plastic package intended for use in circuits where high static and dynamic dV/dt and high

dI/dt can occur. This "series B" triac will commutate the full rated RMS current at the

maximum rated junction temperature without the aid of a snubber.

1.2 Features and benefits

„ 3Q technology for improved noise

immunity

„ High commutation capability with

maximum false trigger immunity

„ High immunity to false turn-on by dV/dt

„ High voltage capability

„ Planar passivated for voltage

ruggedness and reliability

„ Surface-mountable package

„ Triggering in three quadrants only

1.3 Applications

„ Electronic thermostats

„ General purpose motor controls

„ Rectifier-fed DC inductive loads e.g.

DC motors and solenoids

1.4 Quick reference data

Table 1.

Symbol

VDRM

ITSM

Quick reference data

Parameter

repetitive peak

off-state voltage

non-repetitive peak

on-state current

IT(RMS)

RMS on-state current

Static characteristics

IGT

gate trigger current

Conditions

full sine wave; Tj(init) = 25 °C;

tp = 20 ms; see Figure 4;

see Figure 5

full sine wave; Tmb ≤ 102 °C;

see Figure 1; see Figure 2;

see Figure 3

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; see Figure 7

VD = 12 V; IT = 0.1 A; T2+ G-;

Tj = 25 °C; see Figure 7

VD = 12 V; IT = 0.1 A; T2- G-;

Tj = 25 °C; see Figure 7

Min Typ Max Unit

-

-

800 V

-

-

65 A

-

-

8

A

2 18 50 mA

2 21 50 mA

2 34 50 mA

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