BU4525DW 데이터 시트보기 (PDF) - Philips Electronics
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BU4525DW Datasheet PDF : 4 Pages
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Philips Semiconductors
Silicon Diffused Power Transistor
Objective specification
BU4525DW
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
with an integrated damper diode intended for use in horizontal deflection circuits of colour television receivers and
p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very
low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
VF
Diode forward voltage
tf
Fall time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 9.0 A; IB = 2.25 A
f = 16 kHz
f = 70 kHz
IF = 9.0 A
ICsat = 9.0 A;f = 16 kHz
f = 70 kHz
TYP.
-
-
-
-
-
-
9.0
t.b.f
-
0.4
t.b.f
MAX.
1500
800
14
30
125
3.0
-
-
2.2
0.55
t.b.f
UNIT
V
V
A
A
W
V
A
A
V
µs
µs
PINNING - SOT429
PIN
DESCRIPTION
1 base
2 collector
3 emitter
tab collector
PIN CONFIGURATION
1 23
SYMBOL
c
b
Rbe
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths ≤ 25 ˚C
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
14
30
8
12
7
125
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
1 Turn-off current.
July 1998
1
Rev 1.000
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