BU506DF 데이터 시트보기 (PDF) - Philips Electronics

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BU506DF

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BU506F; BU506DF

handbook, full pagewidth

102

IC

(A)

10 ICM max

IC max

II

1

I

10−1

MGB934

10−2

10−3

10−4

1

10

102

103 VCE (V) 104

Mounted with heatsink compound and 30 ±5 N force on centre of package.

Tmb = 25 °C.

I - Region of permissible DC operation.

II - Permissible extension for repetitive pulse operation.

Fig.3 Forward bias SOAR (with heatsink compound).

1997 Aug 14

4

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