BUK7506-55B 데이터 시트보기 (PDF) - Philips Electronics
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BUK7506-55B Datasheet PDF : 15 Pages
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Philips Semiconductors
BUK75/7606-55B
TrenchMOS™ standard level FET
350
ID
20
(A) 10
280
98
7.5
210
140
03nl93
Label is VGS (V)
7
6.5
6
12
RDSon
(mΩ)
10
8
03nl92
5.5
70
5
4.5
0
0
2
4
6
8
10
VDS (V)
6
4
5
10
15
20
VGS (V)
Tj = 25 °C; tp = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C; ID = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
03nl94
14
2
RDSon
Label is VGS (V)
(mΩ)
12
6
7
a
1.5
10
1
8
8
10
0.5
6
20
03ne89
4
0
70
Tj = 25 °C
140
210
280
350
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 11132
Product data
Rev. 01 — 31 March 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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