BUW11W 데이터 시트보기 (PDF) - Philips Electronics
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BUW11W Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW11W; BUW11AW
2.0
handbook, full pagewidth
VBEsat
VCEsat
(V)
1.5
MGB913
1.0
(1)
(2)
0.5
0
10−2
IC/IB = 5.
(1) VBE; Tj = 25 °C.
(2) VBE; Tj = 100 °C.
10−1
(3) VCE; Tj = 25 °C.
(4) VCE; Tj = 25 °C.
(3)
(4)
1
IC (A)
10
Fig.7 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values.
1.6
handbook, full pagewidth
VBE
(V)
1.4
1.2
1.0
MGB910
(1)
(2)
(3)
0.8
0
Tj = 25 °C.
(1) IC = 5 A.
0.25
0.5
0.75
1.0
1.25
IB (A)
1.5
(2) IC = 3 A.
(3) IC = 1.5 A.
Fig.8 Base-emitter voltage as a function of base current; typical values.
1997 Aug 14
6
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