Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BUV42
DESCRIPTION
·With TO-3 package
·Fast switching times
·Low collector saturation voltage
APPLICATIONS
·For switching applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings (Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
ICM
Collector current-peak
IB
Base current
IBM
Base current-peak
PT
Total power dissipation
TC≤25℃
Tj
Junction temperature
Tstg
Storage temperature
VALUE
350
250
7
12
18
2.5
4
120
200
-65~200
UNIT
V
V
V
A
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
VALUE
1.46
UNIT
℃/W