BUZ70L 데이터 시트보기 (PDF) - Siemens AG
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BUZ70L Datasheet PDF : 9 Pages
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BUZ 70 L
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 70 L
VDS
60 V
ID
12 A
RDS(on)
0.15 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 33 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 12 A, VDD = 25 V, RGS = 25 Ω
L = 48.6 µH, Tj = 25 °C
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Vgs
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1325-A2
Values
Unit
A
12
48
12
1
mJ
6
± 14
V
± 20
W
40
-55 ... + 150 °C
-55 ... + 150
≤ 3.1
K/W
75
E
55 / 150 / 56
Semiconductor Group
1
07/96
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