BUZ70L 데이터 시트보기 (PDF) - Siemens AG
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BUZ70L Datasheet PDF : 9 Pages
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BUZ 70 L
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 12 A, VDD = 25 V
RGS = 25 Ω, L = 48.6 µH
6.5
mJ
5.5
EAS 5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20 40 60 80 100 120 °C 160
Tj
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 18 A
16
V
VGS
12
10
8
0,2 VDS max
0,8 VDS max
6
4
2
0
0
4
8
12 16 20 nC 26
QGate
71
V
68
V(BR)DSS
66
64
62
60
58
56
54
-60
-20
20
60
100 °C 160
Tj
Semiconductor Group
8
07/96
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