BUZ 110S
Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Dynamic Characteristics
Gate to source charge
VDD = 40 V, ID = 80 A
Gate to drain charge
VDD = 40 V, ID = 80 A
Gate charge total
VDD = 40 V, ID = 80 A, VGS = 0 to 10 V
Qgs
-
17 26 nC
Qgd
-
41 61.5
Qg
-
85 130
Gate plateau voltage
VDD = 40 V, ID = 80 A
V(plateau)
-
5.8
-V
Reverse Diode
Inverse diode continuous forward current
IS
TC = 25 ˚C
-
-
80 A
Inverse diode direct current,pulsed
TC = 25 ˚C
ISM
-
- 320
Inverse diode forward voltage
VGS = 0 V, IF = 160 A
Reverse recovery time
VR = 30 V, IF=IS , diF/dt = 100 A/µs
VSD
-
1.3
2V
trr
-
80 120 ns
Reverse recovery charge
VR = 30 V, IF=lS , diF/dt = 100 A/µs
Qrr
- 0.17 0.25 µC
Data Book
4
05.99