BYQ28-100 데이터 시트보기 (PDF) - Philips Electronics
부품명
상세내역
제조사
BYQ28-100 Datasheet PDF : 6 Pages
| |||
Philips Semiconductors
Rectifier diodes
ultrafast
Product specification
BYQ28X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Rth j-a
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
5.7
6.7
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
VF
Forward voltage (per diode)
IR
Reverse current (per diode)
CONDITIONS
IF = 5 A; Tj = 150˚C
IF = 5 A
IF = 10 A
VR = VRWM; Tj = 100 ˚C
VR = VRWM
MIN.
-
-
-
-
-
TYP.
0.80
0.95
1.10
0.1
2
MAX.
0.895
1.10
1.25
0.2
10
UNIT
V
V
V
mA
µA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
Qs
Reverse recovery charge (per
diode)
trr1
Reverse recovery time (per
diode)
trr2
Reverse recovery time (per
diode)
Vfr
Forward recovery voltage (per
diode)
CONDITIONS
MIN.
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs -
IF = 1 A; VR ≥ 30 V;
-
-dIF/dt = 100 A/µs
IF = 0.5 A to IR = 1 A; Irec = 0.25 A
-
IF = 1 A; dIF/dt = 10 A/µs
-
TYP.
4
15
10
1
MAX. UNIT
9
nC
25 ns
20 ns
-
V
August 1996
2
Rev 1.000
Share Link: 