APM4532K
Typical Characteristics (Cont.)
P-Channel
Drain-Source On Resistance
1.8
V = -10V
GS
1.6
I = -3.5A
DS
1.4
1.2
1.0
0.8
0.6
0.4
-50 -25 0
R @T =25oC: 85mΩ
ON
j
25 50 75 100 125 150
Tj - Junction Temperature (°C)
Source-Drain Diode Forward
20
10
T =150oC
j
T =25oC
j
1
0.1
0.04
0.0 0.4 0.8 1.2 1.6 2.0
-VSD - Source - Drain Voltage (V)
Capacitance
800
Frequency=1MHz
700
600
Ciss
500
400
300
200
100
Crss
0
0
5
Coss
10 15 20 25 30
-VDS - Drain - Source Voltage (V)
Gate Charge
10
V = -10V
DS
9 I = -3.5A
DS
8
7
6
5
4
3
2
1
0
012345678
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp.
9
Rev. B.1 - Mar., 2005
www.anpec.com.tw