CE1N2R 데이터 시트보기 (PDF) - NEC => Renesas Technology

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CE1N2R

on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

NEC => Renesas Technology 

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Symbol

Conditions

Colletor to emitter voltage

VCEO(SUS) IC = 2.0 A, IB = 5.0 mA, L = 6.0 mH

Collector cutoff current

ICBO

VCB = 40 V, IE = 0

DC current gain

hFE1 ** VCE = 5.0 V, IC = 0.2 A

DC current gain

hFE2 ** VCE = 5.0 V, IC = 1.0 A

DC current gain

hFE3 ** VCE = 5.0 V, IC = 2.0 A

Low level output voltage

Low level input voltage

VOL **

VIL **

VI = 5.0 V, IC = 0.5 A

VCE = 12 V, IC = 100 µA

Input resistance

R1

E-to-B resistance

R2

Turn-on time

Storage time

Fall time

ton

IC = 1.0 A

tstg

IBI = −IB2 = 10 mA

tf

VCC = 20 V, RL = 20 Ω

** Pulse test PW ≤ 350 µs, duty cycle ≤ 2 %

CE1N2R

MIN.

TYP.

MAX.

Unit

50

60

V

100

nA

700

1200

−

1000

1700

3000

−

500

1300

−

0.12

0.3

V

0.43

0.4

V

476

680

884

Ω

7.0

10.0

13.0

kΩ

0.4

µs

1.4

µs

0.5

µs

RECOMMENDED SOLDERING CONDITIONS

This product should be soldered and mounted under the following recommended conditions.

For soldering methods and conditions other than those recommended below, contact an NEC sales representative.

2

Data Sheet D10846EJ2V0DS

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