TGF4350-EPU 데이터 시트보기 (PDF) - TriQuint Semiconductor

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TGF4350-EPU

300um Discrete pHEMT

TriQuint Semiconductor 

Advance Product Information

Electrical Characteristics

TGF4350-EPU

RECOMMENDED MAXIMUM RATINGS

Symbol

V+

I+

PD

PIN

TCH

TM

TSTG

Parameter

Positive Supply Voltage

Positive Supply Current

Power Dissipation

Input Continuous Wave Power

Operating Channel Temperature

Mounting Temperature (30 seconds)

Storage Temperature

Value

7V

.085A

0.6 W

20 dBm

150 °C

320 °C

-65 °C to 150 °C

Notes

3/

1/, 2/

1/ These ratings apply to individual FET

2/ Junction operating temperature will directly affect the device mean time to failure

(MTTF). For maximum life it is recommended that junction temperatures be

maintained at the lowest possible levels.

3/ Nominal value of Idss

Symbol

Idss

VP1-5

BVGS1

BVGD1-5

DC PROBE TESTS

(TA = 25 °C ± 5°C)

Parameter

Saturated Drain Current (info

only)

Pinch-off Voltage

Breakdown Voltage gate-source

Breakdown Voltage gate-drain

Minimum Maximum Value

30

141

mA

-1.5

-0.5

V

-30

-8

V

-30

-8

V

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process

specifications. Specifications are subject to change without notice.

TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com

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