CUS01 데이터 시트보기 (PDF) - Toshiba
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CUS01 Datasheet PDF : 5 Pages
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Marking
Abbreviation Code
1
Part No.
CUS01
Land pattern dimensions for reference only
Unit: mm
2.0
0.5
0.8
1.1
0.8
CUS01
Handling Precaution
1) Schottky barrier diodes have reverse current characteristic compared to the other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. This
device is VF-IRRM trade-off type, lower VF higher IRRM; therefore, thermal runaway might occur when voltage is
applied. Please take forward and reverse loss into consideration during design.
2) The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be
exceeded during operation, even for an instant. The following are the general derating methods that we recommend
for designing a circuit using this device.
VRRM: Use this rating with reference to the above. VRRM has a temperature coefficient of 0.1%/°C. Take this
temperature coefficient into account designing a device at low temperature.
IF(AV):
We recommend that the worst-case current be no greater than 80% of the absolute maximum rating of
IF(AV) and Tj be below 100°C. When using this device, take the margin into consideration by using an
allowable Ta max-IF(AV) curve.
IFSM: This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation,
which seldom occurs during the lifespan of the device.
Tj:
Derate this rating when using a device in order to ensure high reliability. We recommend that the
device be used at Tj below 100°C.
3) Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition. When
using a device, please design a circuit board and a soldering land size to match the appropriate thermal resistance
value.
4) For other design considerations, see the Toshiba website.
2
2018-07-11
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