CY7C1325G-133BGI 데이터 시트보기 (PDF) - Cypress Semiconductor

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CY7C1325G-133BGI

4-Mbit (256K x 18) Flow-Through Sync SRAM

Cypress Semiconductor 

Capacitance[9]

Parameter

Description

CIN

CCLK

CI/O

Input Capacitance

Clock Input Capacitance

Input/Output Capacitance

Thermal Resistance[9]

Test Conditions

TA = 25°C, f = 1 MHz,

VDD = 3.3V, VDDQ = 3.3V

Parameter

Description

ΘJA

Thermal Resistance

(Junction to Ambient)

ΘJC

Thermal Resistance

(Junction to Case)

Test Conditions

Test conditions follow standard test

methods and procedures for

measuring thermal impedance, per

EIA/JESD51.

100 TQFP

Max.

5

5

5

100 TQFP

Package

30.32

6.85

CY7C1325G

119 BGA

Max.

Unit

5

pF

5

pF

7

pF

119 BGA

Package

34.1

14.0

Unit

°C/W

°C/W

AC Test Loads and Waveforms

3.3V I/O Test Load

OUTPUT

3.3V

Z0 = 50Ω

OUTPUT

RL = 50Ω

5 pF

INCLUDING

VT = 1.5V

(a)

JIG AND

SCOPE

2.5V I/O Test Load

OUTPUT

2.5V

Z0 = 50Ω

OUTPUT

RL = 50Ω

5 pF

INCLUDING

VT = 1.25V

JIG AND

(a)

SCOPE

R = 317Ω

R = 351Ω

VDDQ

GND

ALL INPUT PULSES

10%

90%

≤ 1 ns

(b)

(c)

R = 1667Ω

R = 1538Ω

VDDQ

GND

10%

≤ 1 ns

ALL INPUT PULSES

90%

(b)

(c)

Note:

9. Tested initially and after any design or process change that may affect these parameters.

90%

10%

≤ 1 ns

90%

10%

≤ 1 ns

Document #: 38-05518 Rev. *D

Page 8 of 16

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