DG201HSDJ-E3 데이터 시트보기 (PDF) - Vishay Semiconductors

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DG201HSDJ-E3

High-Speed Quad SPST CMOS Analog Switch

Vishay Semiconductors 

TEST CIRCUITS

+ 15 V

± 10 V

3V

V+

S

D

IN

GND

V-

- 15 V

RL

1 kΩ

VO

CL

35 pF

3V

Logic

Input

0V

Switch

Input VS

Switch

Output

VO

CL (includes fixture and stray capacitance)

VO = VS

RL

RL + rDS(on)

Figure 2. Switching Time

+ 15 V

DG201HS

Vishay Siliconix

50 %

tr < 20 ns

tf < 20 ns

tOFF1

90 %

tON

10 %

tOFF2

V+

Rg

S

D

IN

3V

GND

V-

VO

CL

1 nF

Δ VO

VO

INX

SWON

OFF

- 15 V

Figure 3. Charge Injection

Q = ΔVO x CL

+ 15 V

C

V+

VS

S

D

VO

Rg = 50 Ω

IN

RL

0 V, 3 V

GND

V-

C

- 15 V

VS

Off Isolation = 20 log

VO

Figure 4. Off Isolation

+ 15 V

C

VS

Rg = 50 Ω

0 V, 3 V

NC

0 V, 3 V

V+

S1

D1

IN1

S2

D2

IN2

GND

V-

C

- 15 V

VS

XTA LK Isolation = 20 log

VO

C = RF bypass

Figure 5. Crosstalk

50 Ω

VO

RL

Document Number: 70038

S-71241–Rev. G, 25-Jun-07

www.vishay.com

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