FDB031N08 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDB031N08 Datasheet PDF : 8 Pages
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Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDB031N08
Device
FDB031N08
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
∆BVDSS
∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V, TC = 25oC
75
ID = 250µA, Referenced to 25oC
-
VDS = 75V, VGS = 0V
-
VDS = 75V, TC = 150oC
-
VGS = ±20V, VDS = 0V
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 75A
VDS = 10V, ID = 75A
2.5
-
(Note 4)
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 60V, ID = 75A
VGS = 10V
-
-
-
-
-
(Note 4, 5)
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
VDD = 37.5V, ID = 75A
-
RGEN = 25Ω, VGS = 10V
-
(Note 4, 5)
-
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 75A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 75A
dIF/dt = 100A/µs
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.71mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
-
-
-
-
(Note 4)
-
Typ. Max. Units
-
0.05
-
V
-
V/oC
-
1
µA
-
500
-
±100 nA
3.5
4.5
V
2.4
3.1 mΩ
180
-
S
11400 15160 pF
1360 1810 pF
595
800 pF
169
220 nC
60
-
nC
47
-
nC
230
470
ns
191
392
ns
335
680
ns
121
252
ns
-
235
A
-
940
A
-
1.3
V
53
-
ns
77
-
nC
FDB031N08 Rev. A3
2
www.fairchildsemi.com
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