FDD5N50NZF 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDD5N50NZF Datasheet PDF : 8 Pages
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FDD5N50NZF
N-Channel MOSFET
500V, 3.7A, 1.75Ω
Features
• RDS(on) = 1.47Ω ( Typ.)@ VGS = 10V, ID = 1.85A
• Low Gate Charge ( Typ. 9nC)
• Low Crss ( Typ. 4pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant
February 2012
UniFET-IITM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
D
D
G
G
S
D-PAK
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Parameter
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDD5N50NZF
500
±25
3.7
2.2
14
165
3.3
6.25
20
62.5
0.5
-55 to +150
300
FDD5N50NZF
2
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2012 Fairchild Semiconductor Corporation
1
FDD5N50NZF Rev. C0
www.fairchildsemi.com
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