FDZ291P 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDZ291P Datasheet PDF : 6 Pages
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Typical Characteristics
10
VGS = -4.5V
-3.5V
8
6
4
-2.0V
-2.5V
-3.0V
-1.5V
2
0
0
0.25
0.5
0.75
1
1.25
1.5
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
3
VGS = -1.5V
2.6
2.2
1.8
-2.0V
1.4
-2.5V
-3.0V
-3.5V
1
-4.5V
0.6
0
2
4
6
8
10
-ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.5
ID = -4.6A
1.4
VGS = -4.5V
1.3
1.2
1.1
1
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.14
ID = -2.3 A
0.12
0.1
0.08
0.06
0.04
TA = 25oC
TA = 125oC
0.02
0
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VDS = -5V
8
6
4
TA = 125oC
-55oC
2
25oC
0
0.5
0.75
1
1.25
1.5
1.75
2
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
0.001
-55oC
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDZ291P Rev. C1 (W)
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